Sample 23

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
5	1	Si wafer - not bonded	50	0	5.0	50	500	20	10	23.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 8.869 um
Calculated remaining resist as 8.24um, indicating an erosion of 0.50um in 10 minutes of etching
This equates to an erosion rate of 50 nm/min
The etch depth of 0.63um in 10 mins indicates an etch rate of 63.0nm/min
The selectivity is therefore 1.25:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	8.868600
Remaining resist (um)	8.238600
Semiconductor etched(um)	0.630000
Etch rate (nm/min)	63.000000
Erosion rate (nm/min)	50.240000
Selectivity	1.253981